Fully lithography independent fabrication of nanogap electrodes for lateral phase-change random access memory application

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SEU ground and flight data in static random access memories

This paper presents the vulnerabilities of single event effects (SEEs) simulated by heavy ions on ground and observed oil SJ-5 research satellite in space for static random access memories (SRAMs). A single event upset (SEU) prediction code has been used to estimate the proton-induced upset rates based oil the ground test curve of SEU cross-section versus heavy ion linear energy transfer (LET). The result agrees with that of the flight data.

l-ucon: towards layered access control with ucon

IEEE; IEEE Computer Society; IEEE Technical Committee on Scalable Computing (TCSC)

a state-adaptive access control model for web-based idrs system

Huazhong Univ Sci & Technol, Natl Tech Univ Ukraine, Huazhong Normal Univ, Harbin Inst Technol, IEEE Ukraine Sect, I& M/CI Joint Chapter